Silicon nitride (SiNx) is an appealing waveguide material choice for large-scale, high-performance photonic integrated circuits (PICs) due to its low optical loss. However, SiNx PICs require high electric power to realize optical reconfiguration via the weak thermo-optic effect, which limits their scalability in terms of device density and chip power dissipation. We report a 6-mode programmable interferometer PIC operating at the wavelength of 1550 nm on a CMOS-compatible low-temperature inductance coupled plasma chemical vapor deposition (ICP-CVD) silicon nitride platform. By employing suspended thermo-optic phase shifters, the PIC achieves 2× improvement in compactness and 10× enhancement in power efficiency compared to conventional devices. Reconfigurable 6-dimensional linear transformations are demonstrated including cyclic transformations and arbitrary unitary matrices. This work demonstrates the feasibility of fabricating power-efficient large-scale reconfigurable PICs on the low-temperature ICP-CVD silicon nitride platform.

Shaping the light beam is always essential for laser technology and its applications. Among the shaping technologies, shaping the laser in its Fourier domain is a widely used and effective method, such as a pulse shaper, or a 4f system with a phase mask or an iris in between. Orbital angular momentum (OAM) modes spectrum, the Fourier transform of the light field in azimuth, provides a perspective for shaping the light. Here, we propose and experimentally demonstrate a shaping strategy for the azimuthal field by modulating the complex amplitude of the OAM mode spectrum. The scheme utilizes multi-plane light conversion technology and consists only of a spatial light modulator and a mirror. Multiple functions, including beam rotating, beam splitting/combining in azimuth, and OAM mode filtering, are demonstrated. Our work provides a compact and programmable solution for modulating the OAM mode spectrum and shaping beams in azimuth.

Orbital angular momentum (OAM) spectrum diagnosis is a fundamental building block for diverse OAM-based systems. Among others, the simple on-axis interferometric measurement can retrieve the amplitude and phase information of complex OAM spectra in a few shots. Yet, its single-shot retrieval remains elusive, due to the signal–signal beat interference inherent in the measurement. Here, we introduce the concept of Kramers–Kronig (KK) receiver in coherent communications to the OAM domain, enabling rigorous, single-shot OAM spectrum measurement. We explain in detail the working principle and the requirement of the KK method and then apply the technique to precisely measure various characteristic OAM states. In addition, we discuss the effects of the carrier-to-signal power ratio and the number of sampling points essential for rigorous retrieval and evaluate the performance on a large set of random OAM spectra and high-dimensional spaces. Single-shot KK interferometry shows enormous potential for characterizing complex OAM states in real time.

A tunable optical delay line (ODL) featuring high switching speed and low optical loss is highly desirable in many fields. Here, based on the thin-film lithium niobate platform, we demonstrate a digitally tunable on-chip ODL that includes five Mach–Zehnder interferometer optical switches, four flip-chip photodetectors, and four delay-line waveguides. The proposed optical switches can achieve a switching speed of 13 ns and an extinction ratio of 34.9 dB. Using a modified Euler-bend-based spiral structure, the proposed delay-line waveguide can simultaneously achieve a small footprint and low optical propagation loss. The proposed ODL can provide a maximum delay time of 150 ps with a resolution of 10 ps and feature a maximum insertion loss of 3.4 dB.

To spotlight advances in thin film lithium niobate technology, we present a special collection.

Thin-film lithium niobate is a promising material platform for integrated nonlinear photonics, due to its high refractive index contrast with the excellent optical properties. However, the high refractive index contrast and correspondingly small mode field diameter limit the attainable coupling between the waveguide and fiber. In second harmonic generation processes, lack of efficient fiber-chip coupling schemes covering both the fundamental and second harmonic wavelengths has greatly limited the overall efficiency. We design and fabricate an ultra-broadband tri-layer edge coupler with a high coupling efficiency. The coupler allows efficient coupling of 1 dB / facet at 1550 nm and 3 dB / facet at 775 nm. This enables us to achieve an ultrahigh overall second harmonic generation normalized efficiency (fiber-to-fiber) of 1027 % W ^{- 1} cm ^{- 2} (on-chip second harmonic efficiency ∼3256 % W ^{- 1} cm ^{- 2}) in a 5-mm-long periodically-poled lithium niobate waveguide, which is two to three orders of magnitude higher than that in state-of-the-art devices.

The monolithic integration of soliton microcomb devices with active photonic components and high-frequency electronics is highly desirable for practical applications. Among many materials, silicon nitride (SiNx) waveguide layers prepared by low-pressure chemical vapor deposition (LPCVD) have been the main platform for on-chip optical frequency comb generation. However, the high temperatures involved in LPCVD render it incompatible as a back-end process with complementary metal oxide semiconductor (CMOS) or active III-V compound semiconductor fabrication flows. We report the generation of coherent soliton frequency combs in micro-ring resonators fabricated in deuterated silicon nitride (SiNx:D) waveguides with a loss of 0.09 dB/cm. Deposited at 270°C by an inductance-coupled plasma chemical vapor deposition (ICP-CVD) process, the material preparation and fabrication flow are fully CMOS-compatible. These results enable the integration of silicon-nitride-based optical combs and photonic integrated circuits (PICs) on prefabricated CMOS and/or III-V substrates, therefore marking a major step forward in SiNx photonic technologies.